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NTTFS3A08PZTAG Transistor Mosfet P Channel 20V 9A 8WDFN

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NTTFS3A08PZTAG Transistor Mosfet P Channel 20V 9A 8WDFN

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Model Number :	NTTFS3A08PZTAG
Brand Name :	ON
Price :	Discussible
Payment Terms :	L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :	10000pcs/one month
Delivery Time :	3~10 days

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NTTFS3A08PZTAG Transistor Mosfet P Channel 20V 9A 8WDFN

NTTFS3A08PZTAG Transistors FETs MOSFETs Single P-CH 20V 9A 8WDFN P-Channel

Products Description:

1. -20V,-15A,6.7 Mω, P-channel power MOSFET

2. P-channel 20V 9A (Ta) 840mW (Ta) Surface Mount 8-wdfn (3.3x3.3)

3. Trans MOSFET P-CH 20V 22A 8-Pin WDFN EP T/R

4. components -20V,-15A,6.7m ,P channel power MOSFETMOS NTTFS3A08PZTAG

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Quotation Time: < 1mins/item (Capacitor/ Resistor)
< 3mins/item (Other Components)
Delivery Time: < 24 hrs (1-19 items)
< 48 hrs (20-99 items)
< 72 hrs (100-300 items)
PCB Time: < 72 hrs ( Urgent Samples)
< 7 days ( Bulk Order)
PCBA Time: < 5 days (After All Materials Ready)
* The above datas are only applicable to normal materials in idle time.

Technological Parameters:

FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	6.7mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 4.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	5000 pF @ 10 V
Power Dissipation (Max)	840mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-WDFN (3.3x3.3)
Base Product Number	NTTFS3

Product picture:

Quality assurance

1.Every production process has a special person to test to ensure quality

2.Have professional engineers to check the quality

3.All products have passed CE, FCC, ROHS and other certifications

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