FDS6699S transistor MOS tube N channel SOIC-8

Products Description :

1. Product Model :FDS6699S

2. Description: MOSFET

3. FDS6699S transistor MOSFET N channel 21 A 30 V 3.6 MoHM 10 V 1.4 V

4. High performance Trench technology for extremely low RDS (ON) and fast switching

5. High power and current handling capability

6. 100% RG (gate resistance) tested

Technological Parameters:

Since 2000, provide active and passive components, like IC chips,capacitors,resistors, diodes, transistors, and other parts. Original & Brand new parts with timely effective technical support services to meet customers' needs. Business operating markets are designed in multiple countries around the world, with rich supply chains and channels. Our office is located in Huaqiang North shenzhen, Guangdong, China, with abundant supply resources and quick product information. With decades of experience in electronic components, we guarantee the quality and supply of products.
Our area of focus is Automobile Application,Consumer Electronics,Aerospace accessories,Machine and Robot,Medical Instruments,Smart Home,Heavy industry. We have many cooperative manufacturers,and have won many awards and honors,So we have enough ability to provide you with good product prices and services.